Coherent Light Photo-modification, Mass Transport Effect, and Surface Relief Formation in AsxS100-x Nanolayers: Absorption Edge, XPS, and Raman Spectroscopy Combined with Profilometry Study

As x S100-x (x = 40, 45, 50) thin films top surface nanolayers affected by green (532 nm) diode laser illumination have been studied by high-resolution X-ray photoelectron spectroscopy, Raman spectroscopy, optical spectroscopy, and surface profilometry. It is shown that the composition of obtained films depends not only on the composition of the source material but as well on the composition of the vapor during the evaporation process. Near-bandgap laser light decreases both As-As and S-S homopolar bonds in films, obtained from thermal evaporation of the As40S60 and As50S50 glasses. Although As45S55 composition demonstrates increasing of As-As bonds despite to the partial disappearance of S-S bonds, for explanation of this phenomenon Raman investigations has also been performed. It is shown that As4S3 structural units (s.u.) responsible for the observed effect. Laser light induced surface topology of the As45S55 film has been recorded by 2D profilometer.